IRFU3806PBF
MOSFET N-CH 60V 43A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFU3806PBF, is designed for demanding applications. This component features a 60V drain-source breakdown voltage and a continuous drain current capability of 43A at 25°C (Tc). The Rds(on) is specified at a maximum of 15.8mOhm at 25A and 10V Vgs. With a typical gate charge of 30nC at 10V Vgs and an input capacitance (Ciss) of 1150pF at 50V Vds, it offers efficient switching characteristics. The device is housed in an IPAK (TO-251AA) through-hole package, rated for up to 71W of power dissipation (Tc) and operating across a temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for use in power supply, automotive, and industrial motor control applications.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 43A (Tc) |
| Rds On (Max) @ Id, Vgs | 15.8mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 50µA |
| Supplier Device Package | IPAK (TO-251AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 50 V |
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