IRFU3711ZPBF
MOSFET N-CH 20V 93A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFU3711ZPBF is an N-Channel power MOSFET designed for high-efficiency switching applications. This component features a 20V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 93A at 25°C (Tc), with a maximum power dissipation of 79W (Tc). The low on-resistance of 5.7mOhm at 15A and 10V gate-source voltage (Vgs) ensures minimal conduction losses. The device boasts a low gate charge (Qg) of 27 nC at 4.5V Vgs and an input capacitance (Ciss) of 2160 pF at 10V Vds. Packaged in an IPAK (TO-251AA) through-hole configuration, it operates across a wide temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 93A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 2.45V @ 250µA |
| Supplier Device Package | IPAK (TO-251AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2160 pF @ 10 V |
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