IRFU3711
MOSFET N-CH 20V 100A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFU3711 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a low on-resistance of 6.5 mOhm at 15A and 10V, coupled with a drain-source voltage (Vdss) of 20 V. It offers a continuous drain current (Id) of 100A at 25°C (Tc) and a maximum power dissipation of 120W (Tc). The device utilizes a Metal Oxide technology and comes in an IPAK (TO-251AA) package suitable for through-hole mounting. Key parameters include a gate charge (Qg) of 44 nC at 4.5V and input capacitance (Ciss) of 2980 pF at 10V. Operating temperature range is -55°C to 150°C (TJ). This MOSFET is commonly found in automotive and industrial applications requiring robust power management.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 120W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | IPAK (TO-251AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2980 pF @ 10 V |
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