IRFU3710Z
MOSFET N-CH 100V 42A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFU3710Z is an N-Channel power MOSFET designed for high-efficiency switching applications. This component features a 100 V drain-source breakdown voltage and a continuous drain current capability of 42 A at 25°C case temperature. The device exhibits a low on-resistance of 18 mOhm maximum at 33 A and 10 V gate-source voltage, contributing to reduced conduction losses. With a maximum power dissipation of 140 W at 25°C case temperature and a junction-to-case thermal resistance, it is suitable for demanding power management tasks. The IPAK (TO-251AA) through-hole package facilitates robust mounting. Typical applications include automotive systems, industrial power supplies, and motor control, where reliable power switching is critical. The device operates across a wide temperature range of -55°C to 175°C.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 33A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK (TO-251AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2930 pF @ 25 V |
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