IRFU3709ZPBF
MOSFET N-CH 30V 86A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFU3709ZPBF is an N-Channel Power MOSFET featuring a 30V drain-source voltage and a continuous drain current of 86A at 25°C (Tc). This component offers a low on-resistance of 6.5mOhm maximum at 15A and 10V, with a gate threshold voltage of 2.25V maximum at 250µA. The device exhibits a gate charge of 26nC maximum at 4.5V and input capacitance of 2330pF maximum at 15V. It is packaged in an IPAK (TO-251AA) with through-hole mounting, designed for applications requiring efficient power switching. The maximum power dissipation is 79W at 25°C (Tc). This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 86A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
| Supplier Device Package | IPAK (TO-251AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2330 pF @ 15 V |
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