IRFU3709
MOSFET N-CH 30V 90A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFU3709, offers a 30V drain-source breakdown voltage and a continuous drain current capability of 90A at 25°C (Tc). This device features a low on-resistance of 9mOhm maximum at 15A and 10V Vgs, with a gate threshold voltage of 3V (max) at 250µA. The IRFU3709 exhibits a typical gate charge of 41 nC at 4.5V Vgs and an input capacitance (Ciss) of 2672 pF (max) at 16V Vds. With a maximum power dissipation of 120W (Tc), this MOSFET is designed for through-hole mounting in an IPAK (TO-251AA) package. Operating temperature range is -55°C to 150°C (TJ). Its characteristics make it suitable for applications in industrial power supplies and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 120W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | IPAK (TO-251AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2672 pF @ 16 V |
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