IRFU3708
MOSFET N-CH 30V 61A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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The Infineon Technologies HEXFET® IRFU3708 is a high-performance N-Channel Power MOSFET designed for demanding applications. Featuring a Drain-Source Voltage (Vdss) of 30V, this component offers a continuous Drain Current (Id) of 61A (Tc) at 25°C and a maximum power dissipation of 87W (Tc). The Rds On is specified at a maximum of 12.5mOhm when conducting 15A with a 10V gate-source voltage. With a gate charge (Qg) of 24 nC at 4.5V and input capacitance (Ciss) of 2417 pF at 15V, it provides efficient switching characteristics. The device supports a wide drive voltage range from 2.8V to 10V and has a maximum gate-source voltage of ±12V. Packaged in an IPAK (TO-251AA) with through-hole mounting, it operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for use in automotive, industrial motor control, and power supply applications.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 61A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 87W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | IPAK (TO-251AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.8V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2417 pF @ 15 V |
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