IRFU3707ZPBF
MOSFET N-CH 30V 56A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFU3707ZPBF is an N-channel power MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 56A at 25°C (Tc). The low on-resistance of 9.5mOhm at 15A and 10V (Vgs) minimizes conduction losses. With a Gate Charge (Qg) of 14 nC at 4.5V, it supports fast switching speeds. The IPAK (TO-251AA) package with through-hole mounting and a maximum power dissipation of 50W (Tc) is suitable for demanding thermal environments. Key parameters include Input Capacitance (Ciss) of 1150 pF at 15V and a maximum Vgs of ±20V. The operating temperature range is -55°C to 175°C (TJ). This device finds application in automotive, industrial power control, and power supply systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 2.25V @ 25µA |
| Supplier Device Package | IPAK (TO-251AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 15 V |
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