IRFU3704ZPBF
MOSFET N-CH 20V 60A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' HEXFET® series IRFU3704ZPBF is a 20V N-Channel power MOSFET designed for demanding applications. This component offers a continuous drain current capability of 60A at 25°C, with a maximum power dissipation of 48W (Tc). Key electrical characteristics include a low Rds(on) of 8.4mOhm at 15A and 10V, and a gate charge (Qg) of 14 nC maximum at 4.5V. The input capacitance (Ciss) is 1190 pF maximum at 10V. Featuring a 2.55V maximum gate threshold voltage, this MOSFET supports a wide gate-source voltage range of ±20V. It is housed in an IPAK (TO-251AA) through-hole package, suitable for operation across an extended temperature range of -55°C to 175°C. This component finds application in automotive systems, industrial power supplies, and battery management.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.4mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 48W (Tc) |
| Vgs(th) (Max) @ Id | 2.55V @ 250µA |
| Supplier Device Package | IPAK (TO-251AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1190 pF @ 10 V |
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