IRFU3607TRL701P
MOSFET N CH 75V 56A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® IRFU3607TRL701P is an N-Channel power MOSFET designed for high-efficiency switching applications. This component features a 75V drain-source voltage (Vdss) and a continuous drain current (Id) of 56A at 25°C (Tc). The Rds(on) is specified at a low 9mOhm maximum at 46A and 10V gate-source voltage. With a maximum power dissipation of 140W (Tc), it is suitable for demanding thermal environments. The IPAK (TO-251AA) package with short leads allows for efficient mounting and thermal management. Key parameters include a gate charge (Qg) of 84 nC maximum at 10V and input capacitance (Ciss) of 3070 pF maximum at 50V. This component is commonly utilized in industrial power supplies, automotive electronics, and motor control systems. The operating junction temperature range is -55°C to 175°C. Packaged in Tape & Reel for automated assembly.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 46A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | IPAK (TO-251AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 84 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3070 pF @ 50 V |
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