IRFU3504ZPBF
MOSFET N-CH 40V 42A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFU3504ZPBF is an N-Channel power MOSFET designed for demanding applications. This component features a 40V drain-source voltage and a continuous drain current of 42A at 25°C (Tc), with a maximum power dissipation of 90W (Tc). The low on-resistance of 9mOhm at 42A and 10V gate drive voltage, coupled with a typical gate charge of 45nC, ensures efficient switching. The input capacitance (Ciss) is rated at 1510pF at 25V. Packaged in an IPAK (TO-251AA) through-hole package, this MOSFET operates across a wide temperature range of -55°C to 175°C (TJ). Its robust construction and performance characteristics make it suitable for use in power supplies, motor control, and automotive applications.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 42A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK (TO-251AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1510 pF @ 25 V |
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