IRFU3504Z
MOSFET N-CH 40V 42A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFU3504Z. This device features a 40V drain-source breakdown voltage and a continuous drain current capability of 42A at 25°C (Tc). The Rds(on) is specified at a maximum of 9mOhm with a 10V gate drive voltage and 42A drain current. With a gate charge of 45 nC (max) at 10V and input capacitance of 1510 pF (max) at 25V, this MOSFET is suitable for applications requiring efficient switching. The device offers a 90W (Tc) maximum power dissipation and operates across an extended temperature range of -55°C to 175°C (TJ). Packaged in an IPAK (TO-251AA) through-hole configuration, the IRFU3504Z is utilized in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 42A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 90W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 50µA |
| Supplier Device Package | IPAK (TO-251AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1510 pF @ 25 V |
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