IRFU3412PBF
MOSFET N-CH 100V 48A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFU3412PBF is a 100V N-Channel Power MOSFET. This component features a continuous drain current capability of 48A at 25°C and a maximum power dissipation of 140W (Tc). The Rds(on) is specified at 25mOhm maximum at 29A and 10V gate drive. Key electrical parameters include a gate charge (Qg) of 89 nC maximum at 10V and input capacitance (Ciss) of 3430 pF maximum at 25V. It operates within a junction temperature range of -55°C to 175°C. The device is housed in an IPAK (TO-251AA) package with through-hole mounting. This MOSFET is suitable for applications in automotive and industrial power control systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 29A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | IPAK (TO-251AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 89 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3430 pF @ 25 V |
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