IRFU3303
MOSFET N-CH 30V 33A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFU3303 is an N-channel power MOSFET designed for high-efficiency switching applications. This device features a 30V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 33A at 25°C (Tc). The low on-resistance (Rds On) of 31mOhm is achieved at 18A and a 10V gate-source voltage (Vgs). Key parameters include a gate charge (Qg) of 29nC and input capacitance (Ciss) of 750pF, both specified at 10V and 25V Vgs and Vds respectively. The IPAK (TO-251AA) package facilitates through-hole mounting. With a maximum power dissipation of 57W (Tc) and an operating temperature range of -55°C to 150°C, the IRFU3303 is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 57W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK (TO-251AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 25 V |
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