IRFU2905ZPBF
MOSFET N-CH 55V 42A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFU2905ZPBF. This component features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 42A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 14.5mOhm at 36A and 10V, with a Gate Charge (Qg) of 44nC at 10V. Input capacitance (Ciss) is specified at a maximum of 1380pF at 25V. The MOSFET is housed in an IPAK (TO-251AA) package with through-hole mounting. Maximum power dissipation is 110W (Tc). This device is suitable for applications requiring high current switching and is commonly utilized in industrial automation, power supply units, and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 14.5mOhm @ 36A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK (TO-251AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1380 pF @ 25 V |
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