IRFU2407
MOSFET N-CH 75V 42A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFU2407 is an N-Channel power MOSFET designed for high-efficiency switching applications. This component features a drain-source voltage (Vds) of 75V and a continuous drain current (Id) of 42A at 25°C (Tc), with a maximum power dissipation of 110W (Tc). The on-resistance (Rds On) is specified at 26mOhm maximum at 25A and 10V gate-source voltage (Vgs). The IRFU2407 utilizes a through-hole mounting package, IPAK (TO-251AA), with a gate charge (Qg) of 110nC at 10V and input capacitance (Ciss) of 2400pF maximum at 25V. This device is suitable for use in industrial and automotive power management systems operating within a temperature range of -55°C to 175°C.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK (TO-251AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 25 V |
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