IRFU2307ZPBF
MOSFET N-CH 75V 42A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFU2307ZPBF is an N-Channel Power MOSFET designed for high-current switching applications. This component features a Drain-Source Voltage (Vdss) of 75V and a continuous Drain Current (Id) of 42A at 25°C (Tc). The device exhibits a low On-Resistance (Rds On) of 16mOhm at 32A and 10V Vgs, ensuring efficient power transfer. With a maximum power dissipation of 110W (Tc) and a junction temperature range of -55°C to 175°C, it is suitable for demanding thermal environments. The IPAK (TO-251AA) package with short leads facilitates through-hole mounting. Key parameters include a Gate Charge (Qg) of 75 nC at 10V and an Input Capacitance (Ciss) of 2190 pF at 25V. This MOSFET is utilized in various industrial sectors including automotive, power supply, and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 32A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 110W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | IPAK (TO-251AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2190 pF @ 25 V |
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