IRFU220N
MOSFET N-CH 200V 5A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFU220N is an N-channel power MOSFET designed for efficient switching applications. This device features a Drain-to-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 5A at 25°C (Tc). The On-Resistance (Rds On) is specified at a maximum of 600mOhm at 2.9A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 23 nC at 10V and an Input Capacitance (Ciss) of 300 pF at 25V. The MOSFET operates with a Gate-Source Voltage (Vgs) tolerance of ±20V and a threshold voltage (Vgs(th)) of 4V at 250µA. With a maximum power dissipation of 43W (Tc), it is housed in an IPAK (TO-251AA) package suitable for through-hole mounting. This component finds application in power supply units, motor control, and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 2.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 43W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK (TO-251AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 25 V |
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