IRFU13N15D
MOSFET N-CH 150V 14A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFU13N15D, is designed for high-efficiency power switching applications. This device features a drain-source voltage (Vdss) of 150V and a continuous drain current (Id) of 14A at 25°C (Tc). With a maximum power dissipation of 86W (Tc) and a low on-resistance (Rds On) of 180mOhm at 8.3A and 10V gate drive, it offers excellent conduction losses. The IRFU13N15D has a gate charge (Qg) of 29 nC at 10V and an input capacitance (Ciss) of 620 pF at 25V. It operates across a wide temperature range from -55°C to 175°C (TJ). Packaged in an IPAK (TO-251AA) with through-hole mounting, this component is suitable for industrial and automotive power control systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 8.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 86W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | IPAK (TO-251AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 25 V |
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