IRFU12N25DPBF
MOSFET N-CH 250V 14A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFU12N25DPBF is an N-Channel Power MOSFET designed for demanding applications. This component features a 250V Drain-Source Voltage (Vdss) and a continuous drain current capability of 14A (Tc) at 25°C. With a low on-resistance (Rds On) of 260mOhm maximum at 8.4A and 10V Vgs, it offers efficient power handling. The device boasts a maximum power dissipation of 144W (Tc) and a junction temperature range of -55°C to 175°C. Packaged in an IPAK (TO-251AA) through-hole configuration, the IRFU12N25DPBF is suitable for use in power supply, industrial, and automotive sectors where robust performance and thermal management are critical. Key electrical parameters include a gate charge (Qg) of 35 nC maximum at 10V and input capacitance (Ciss) of 810 pF maximum at 25V.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 260mOhm @ 8.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 144W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | IPAK (TO-251AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 810 pF @ 25 V |
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