IRFU12N25D
MOSFET N-CH 250V 14A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFU12N25D is an N-Channel Power MOSFET with a Drain-Source Voltage (Vdss) of 250V. This component features a continuous drain current (Id) of 14A at 25°C with a maximum power dissipation of 144W (Tc). The Rds On is specified at 260mOhm maximum when driven at 8.4A and 10V. It has a gate charge (Qg) of 35 nC maximum at 10V and input capacitance (Ciss) of 810 pF maximum at 25V. The IRFU12N25D is housed in an IPAK (TO-251AA) package, suitable for through-hole mounting. Operating temperature ranges from -55°C to 175°C (TJ). This device is utilized in various industrial applications, including power supply units and motor control systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Rds On (Max) @ Id, Vgs | 260mOhm @ 8.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 144W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | IPAK (TO-251AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 810 pF @ 25 V |
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