IRFU120ZPBF
MOSFET N-CH 100V 8.7A IPAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFU120ZPBF is an N-Channel power MOSFET designed for high-efficiency switching applications. This through-hole component features a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 8.7A at 25°C. The Rds On is specified at a maximum of 190mOhm at 5.2A and 10V gate drive. With a gate charge (Qg) of 10 nC and input capacitance (Ciss) of 310 pF, it offers good switching characteristics. The IPAK (TO-251AA) package dissipates up to 35W (Tc) and operates within an extended temperature range of -55°C to 175°C. This device is suitable for use in industrial automation, power supply, and motor control systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 5.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 35W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK (TO-251AA) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 310 pF @ 25 V |
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