IRFSL7762PBF
MOSFET N-CH 75V 85A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' IRFSL7762PBF is a high-performance N-Channel MOSFET from the StrongIRFET™ series. This component features a 75V drain-source voltage (Vdss) and a continuous drain current (Id) of 85A at 25°C (Tc), with a maximum power dissipation of 140W (Tc). The low on-resistance of 6.7mOhm at 51A and 10V (Vgs) is achieved through its MOSFET technology. It offers a gate charge (Qg) of 130 nC at 10V and input capacitance (Ciss) of 4440 pF at 25V. The device is housed in a TO-262-3 Long Leads, I2PAK package suitable for through-hole mounting. Operating temperature ranges from -55°C to 175°C. This component is commonly utilized in industrial power supplies, motor control, and automotive applications.
Additional Information
Series: HEXFET®, StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 85A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.7mOhm @ 51A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 3.7V @ 100µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4440 pF @ 25 V |
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