IRFSL7540PBF
MOSFET N-CH 60V 110A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' IRFSL7540PBF is a N-Channel MOSFET from the StrongIRFET™ series. This component features a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 110A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 5.1mOhm at 65A and 10V, with a maximum power dissipation of 160W (Tc). Key parameters include a gate charge (Qg) of 130 nC at 10V and an input capacitance (Ciss) of 4555 pF at 25V. The MOSFET is housed in a TO-262-3 Long Leads package, suitable for through-hole mounting. Operating temperatures range from -55°C to 175°C. This component is commonly utilized in power management applications within the automotive and industrial sectors.
Additional Information
Series: HEXFET®, StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.1mOhm @ 65A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 160W (Tc) |
| Vgs(th) (Max) @ Id | 3.7V @ 100µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4555 pF @ 25 V |
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