IRFSL7537PBF
MOSFET N-CH 60V 173A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' IRFSL7537PBF is a high-performance N-Channel Power MOSFET from the StrongIRFET™ family. This component features a 60V drain-source voltage rating and a continuous drain current capability of 173A at 25°C (Tc), with a maximum power dissipation of 230W (Tc). Its low on-resistance of 3.3mOhm is achieved at 100A and 10V gate-source voltage. The device utilizes HEXFET® technology for optimized performance and includes a gate charge (Qg) of 210 nC at 10V and input capacitance (Ciss) of 7020 pF at 25V. Packaged in a TO-262-3 Long Leads (I2PAK, TO-262AA) format for through-hole mounting, the IRFSL7537PBF is designed for demanding applications across various industries including industrial automation, power supplies, and electric vehicle powertrains. It operates within an extended temperature range of -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®, StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 173A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.3mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 3.7V @ 150µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 210 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7020 pF @ 25 V |
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