IRFSL7440PBF
MOSFET N CH 40V 120A TO-262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' HEXFET®, StrongIRFET™ series IRFSL7440PBF is a high-performance N-Channel Power MOSFET. This component features a 40V drain-source breakdown voltage and a continuous drain current capability of 120A at 25°C (Tc), with a maximum power dissipation of 208W (Tc). The low on-resistance (Rds On) of 2.5mOhm at 100A and 10V gate-source voltage, combined with a low gate charge of 135 nC (max) at 10V, ensures efficient switching.
Designed for demanding applications, the IRFSL7440PBF utilizes advanced MOSFET technology and is housed in a TO-262-3 Long Leads, I2PAK, TO-262AA package for through-hole mounting. Key electrical parameters include an input capacitance (Ciss) of 4730 pF (max) at 25V and a gate threshold voltage (Vgs(th)) of 3.9V (max) at 100µA. This device operates across a wide temperature range of -55°C to 175°C (TJ). Industries leveraging this component include automotive, industrial power control, and high-power switching applications.
Additional Information
Series: HEXFET®, StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 100µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 135 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4730 pF @ 25 V |
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