IRFSL7437TRLPBF
MOSFET N-CH 40V 195A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the IRFSL7437TRLPBF, a StrongIRFET™ N-Channel power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 40V and a continuous Drain Current (Id) of 195A at 25°C, with a maximum Power Dissipation of 230W at the same temperature. The device exhibits a low On-Resistance (Rds On) of 1.8mOhm at 100A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 225 nC at 10V and an Input Capacitance (Ciss) of 7330 pF at 25V. The IRFSL7437TRLPBF is housed in a TO-262 package, suitable for through-hole mounting, and is supplied in Tape & Reel packaging. This MOSFET is utilized across various industries including industrial power supplies, motor control, and electric vehicle systems where high current handling and efficiency are critical. It supports gate drive voltages from 6V to 10V and maintains operation across a temperature range of -55°C to 175°C.
Additional Information
Series: HEXFET®, StrongIRFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.8mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 150µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 225 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7330 pF @ 25 V |
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