IRFSL59N10D
MOSFET N-CH 100V 59A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFSL59N10D, offers a 100V drain-source voltage and a continuous drain current of 59A at 25°C (Tc). This device features a low on-resistance of 25mOhm maximum at 35.4A and 10V gate-source voltage. The IRFSL59N10D is housed in a TO-262-3 Long Leads package, suitable for through-hole mounting. Key electrical specifications include a gate charge of 114 nC maximum at 10V and input capacitance of 2450 pF maximum at 25V. With a maximum power dissipation of 200W (Tc), this MOSFET is designed for demanding applications in power electronics, industrial automation, and automotive systems. Operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 59A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 35.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 114 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2450 pF @ 25 V |
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