IRFSL5615PBF
MOSFET N-CH 150V 33A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' IRFSL5615PBF is an N-Channel Power MOSFET designed for high-efficiency power management applications. This component offers a Drain-Source Voltage (Vdss) of 150V and a continuous drain current (Id) of 33A at 25°C (Tc), with a maximum power dissipation of 144W (Tc). Featuring a low on-resistance (Rds On) of 42mOhm at 21A and 10V, it minimizes conduction losses. The device has a gate charge (Qg) of 40 nC at 10V and an input capacitance (Ciss) of 1750 pF at 50V. Operating across a wide temperature range of -55°C to 175°C (TJ), it is housed in a TO-262-3 Long Leads, I2PAK, TO-262AA package, suitable for through-hole mounting. This MOSFET finds utility in industries such as industrial automation, consumer electronics, and power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33A (Tc) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 144W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 100µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1750 pF @ 50 V |
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