IRFSL4710PBF
MOSFET N-CH 100V 75A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFSL4710PBF is an N-Channel power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 75A at 25°C (Tc). The device exhibits a low on-resistance (Rds On) of 14mOhm maximum at 45A and 10V gate drive. Key parameters include a gate charge (Qg) of 170 nC maximum at 10V and input capacitance (Ciss) of 6160 pF maximum at 25V. With a maximum power dissipation of 200W (Tc) and 3.8W (Ta), the IRFSL4710PBF is suitable for high-power switching and motor control circuits. It is housed in a TO-262-3 Long Leads package, enabling through-hole mounting. This MOSFET operates across a wide temperature range of -55°C to 175°C (TJ). Applications include industrial power supplies and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 200W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6160 pF @ 25 V |
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