IRFSL4610PBF
MOSFET N-CH 100V 73A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFSL4610PBF. This through-hole component features a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 73A at 25°C. The device exhibits a low on-resistance (Rds On) of 14mOhm at 44A and 10V gate-source voltage (Vgs). With a maximum power dissipation of 190W (Tc) and a Tj range of -55°C to 175°C, it is suitable for demanding applications. Key electrical characteristics include a gate charge (Qg) of 140 nC at 10V and an input capacitance (Ciss) of 3550 pF at 50V. The component is housed in a TO-262 package. This MOSFET is utilized in industrial and automotive power management solutions.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 73A (Tc) |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 44A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 190W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3550 pF @ 50 V |
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