IRFSL4410ZPBF
MOSFET N-CH 100V 97A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFSL4410ZPBF is a high-performance N-Channel power MOSFET featuring a 100V drain-source voltage and a continuous drain current of 97A at 25°C (Tc). This device offers a low on-resistance of 9mOhm maximum at 58A and 10V Vgs, with a maximum power dissipation of 230W (Tc). The gate charge (Qg) is 120 nC maximum at 10V, and input capacitance (Ciss) is 4820 pF maximum at 50V. Designed for through-hole mounting in a TO-262 package, the IRFSL4410ZPBF operates across a wide temperature range of -55°C to 175°C (TJ). Its robust construction and electrical characteristics make it suitable for various industrial applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 97A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 58A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 230W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4820 pF @ 50 V |
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