IRFSL4410
MOSFET N-CH 100V 96A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFSL4410. This through-hole component features a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 96A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 10mOhm at 58A and 10V, with a maximum power dissipation of 250W (Tc). Key parameters include a gate charge (Qg) of 180 nC at 10V and an input capacitance (Ciss) of 5150 pF at 50V. The IRFSL4410 is housed in a TO-262 package and operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for applications in industrial and automotive sectors requiring high current switching capabilities.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 96A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 58A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5150 pF @ 50 V |
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