IRFSL4321PBF
MOSFET N-CH 150V 85A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFSL4321PBF is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a 150V Drain-Source Voltage (Vdss) and a continuous drain current capability of 85A at 25°C (Tc), with a maximum power dissipation of 350W (Tc). The Rds(on) is specified at a low 15mOhm maximum at 33A and 10V Vgs. Key parameters include a gate charge (Qg) of 110nC at 10V and input capacitance (Ciss) of 4460pF at 25V. Operating across a junction temperature range of -55°C to 175°C, the IRFSL4321PBF is housed in a TO-262-3 Long Leads package. This device is commonly utilized in power supplies, automotive electronics, and industrial motor control systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 85A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 33A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 350W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4460 pF @ 25 V |
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