IRFSL4310PBF
MOSFET N-CH 100V 130A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFSL4310PBF, offers a 100V drain-source breakdown voltage and a continuous drain current capability of 130A at 25°C (Tc). This component features a low on-resistance of 7mOhm maximum at 75A and 10V gate-source voltage. Designed for through-hole mounting in a TO-262 package, it provides a maximum power dissipation of 300W (Tc) and operates across a wide temperature range from -55°C to 175°C (TJ). Key electrical parameters include input capacitance (Ciss) of 7670pF maximum at 50V and gate charge (Qg) of 250nC maximum at 10V. This MOSFET is suitable for applications in automotive, industrial power control, and high-current switching power supplies.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 130A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 250 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7670 pF @ 50 V |