IRFSL4229PBF
MOSFET N-CH 250V 45A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFSL4229PBF is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a drain-source voltage (Vdss) of 250V and a continuous drain current (Id) of 45A at 25°C (Tc), with a maximum power dissipation of 330W (Tc). The ON-resistance (Rds On) is specified at a maximum of 48mOhm at 26A and 10V gate-source voltage. Key parameters include input capacitance (Ciss) of 4560pF at 25V and gate charge (Qg) of 110nC at 10V. The device operates across a temperature range of -40°C to 175°C and is housed in a through-hole TO-262-3 Long Leads package, also known as I2PAK or TO-262AA. This MOSFET is suitable for use in industrial power supplies, automotive systems, and motor control applications.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 48mOhm @ 26A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 330W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4560 pF @ 25 V |
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