IRFSL4127PBF
MOSFET N-CH 200V 72A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFSL4127PBF is an N-Channel power MOSFET designed for demanding applications. This component features a 200V drain-to-source voltage (Vdss) and a continuous drain current of 72A at 25°C (Tc), with a maximum power dissipation of 375W (Tc). The device exhibits a low on-resistance of 22mOhm at 44A and 10V (Vgs), and a gate charge of 150nC at 10V (Vgs). With a high input capacitance (Ciss) of 5380pF at 50V (Vds) and an operating temperature range of -55°C to 175°C (TJ), it is suitable for applications in industrial power supplies, motor control, and high-power switching. The IRFSL4127PBF is packaged in a TO-262-3 Long Leads, I2PAK, TO-262AA (TO-262-3 Long Leads) through-hole configuration and supplied in tubes.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 72A (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 44A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-262 |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5380 pF @ 50 V |
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