IRFSL4115PBF
MOSFET N-CH 150V 195A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel MOSFET, part number IRFSL4115PBF, offers a 150V drain-source voltage and a continuous drain current of 195A at 25°C (Tc). This through-hole component features a low Rds(on) of 12.1mOhm at 62A and 10V gate drive. The maximum power dissipation is 375W (Tc). Key electrical characteristics include a gate charge of 120nC at 10V and an input capacitance of 5270pF at 50V. The IRFSL4115PBF is housed in a TO-262-3 long leads package, also known as I2PAK or TO-262AA. This device is suitable for applications in industrial and power electronics sectors.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.1mOhm @ 62A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5270 pF @ 50 V |
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