IRFSL4020PBF
MOSFET N-CH 200V 18A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IRFSL4020PBF is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This through-hole component features a Drain-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 18A at 25°C (Tc), with a maximum power dissipation of 100W (Tc). The Rds(on) is specified at a maximum of 105mOhm at 11A and 10V Vgs. Key parameters include a gate charge (Qg) of 29 nC (max) at 10V and input capacitance (Ciss) of 1200 pF (max) at 50V Vds. The device operates within a temperature range of -55°C to 175°C (TJ) and is housed in a TO-262-3 Long Leads, I2PAK, TO-262AA package. This MOSFET is suitable for use in industrial power supplies, automotive electronics, and motor control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 4.9V @ 100µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 50 V |
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