IRFSL4010PBF
MOSFET N-CH 100V 180A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFSL4010PBF is an N-Channel Power MOSFET designed for high-current applications. This through-hole component features a 100V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 180A at 25°C (Tc). With a low on-resistance of 4.7mOhm at 106A and 10V (Vgs), it minimizes conduction losses. The device offers a maximum power dissipation of 375W (Tc) and a gate charge (Qg) of 215 nC at 10V. Its TO-262-3 Long Leads package facilitates robust mounting. The IRFSL4010PBF is suitable for use in demanding applications within the industrial and automotive sectors, leveraging its efficient switching and thermal performance characteristics.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 106A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 375W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 215 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9575 pF @ 50 V |
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