IRFSL38N20DPBF
MOSFET N-CH 200V 43A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFSL38N20DPBF is a 200V N-Channel Power MOSFET in a TO-262 package. This device features a continuous drain current capability of 43A at 25°C (Tc) and a low on-resistance of 54mOhm maximum at 26A, 10V. The input capacitance (Ciss) is 2900pF maximum at 25V, with a gate charge (Qg) of 91nC maximum at 10V. The threshold voltage (Vgs(th)) is 5V maximum at 250µA. This component is suitable for demanding applications in industrial power supplies, automotive systems, and renewable energy sectors.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 43A (Tc) |
| Rds On (Max) @ Id, Vgs | 54mOhm @ 26A, 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-262 |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 91 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 25 V |