IRFSL3207
MOSFET N-CH 75V 180A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFSL3207, is a high-performance discrete semiconductor designed for demanding power management applications. This device offers a Drain-Source Voltage (Vdss) of 75V and a continuous Drain Current (Id) capability of 180A at 25°C, with a maximum power dissipation of 330W. The IRFSL3207 features a low On-Resistance (Rds On) of 4.5mOhm at 75A and 10V, minimizing conduction losses. Its robust design includes a typical gate charge of 260 nC at 10V and an input capacitance of 7600 pF at 50V. Operating across a wide temperature range of -55°C to 175°C, this MOSFET is housed in a TO-262-3 Long Leads package, suitable for through-hole mounting. This component is widely utilized in industrial power supplies, automotive systems, and high-power switching applications.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 330W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 260 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7600 pF @ 50 V |
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