IRFSL31N20D
MOSFET N-CH 200V 31A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFSL31N20D is a 200V N-Channel power MOSFET designed for demanding applications. This component features a continuous drain current capability of 31A at 25°C (Tc) and a low on-resistance of 82mOhm at 18A, 10V. With a gate charge of 110 nC at 10V and input capacitance of 2370 pF at 25V, it offers efficient switching characteristics. The device supports a drain to source voltage (Vdss) of 200V and a maximum gate-source voltage (Vgs) of ±30V. The IRFSL31N20D is housed in a TO-262-3 Long Leads package, facilitating through-hole mounting. Its power dissipation is rated at 200W (Tc) and 3.1W (Ta). Operating temperature range is -55°C to 175°C (TJ). This MOSFET is suitable for use in power supply units, motor control, and industrial automation.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
| Rds On (Max) @ Id, Vgs | 82mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.1W (Ta), 200W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2370 pF @ 25 V |
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