IRFSL3107PBF
MOSFET N-CH 75V 195A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFSL3107PBF, an N-Channel Power MOSFET, features a high continuous drain current capability of 195A (Tc) at 25°C and a drain-source voltage (Vdss) of 75V. This through-hole component is housed in a TO-262 package, offering a low on-resistance (Rds On) of 3mOhm at 140A and 10V. The device boasts a maximum power dissipation of 370W (Tc) and a gate charge (Qg) of 240 nC @ 10V. With an operating temperature range of -55°C to 175°C (TJ), the IRFSL3107PBF is suitable for demanding applications across various industrial sectors, including power supplies, motor control, and automotive systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 140A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 370W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9370 pF @ 50 V |
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