IRFSL3004PBF
MOSFET N-CH 40V 195A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFSL3004PBF. This device features a 40 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 195 A at 25°C. The IRFSL3004PBF offers a low on-resistance (Rds On) of 1.75 mOhm at 195 A and 10 V gate-source voltage. With a maximum power dissipation of 380 W at the case temperature, this MOSFET is suitable for high-power applications. Key parameters include a gate charge (Qg) of 240 nC and input capacitance (Ciss) of 9200 pF. The component is housed in a TO-262-3 Long Leads, I2PAK, TO-262AA package for through-hole mounting. Operating temperature range is -55°C to 175°C. This MOSFET is widely utilized in industrial power supplies, automotive applications, and high-current switching circuits.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 195A (Ta) |
| Rds On (Max) @ Id, Vgs | 1.75mOhm @ 195A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 380W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 9200 pF @ 25 V |
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