IRFSL23N20D
MOSFET N-CH 200V 24A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies HEXFET® N-Channel Power MOSFET, part number IRFSL23N20D, offers a 200 V drain-source breakdown voltage and 24 A continuous drain current at 25°C (Tc). This component features a maximum Rds(on) of 100 mOhm at 14 A and 10 V, with a gate charge (Qg) of 86 nC at 10 V. The input capacitance (Ciss) is rated at a maximum of 1960 pF at 25 V. Designed for through-hole mounting in a TO-262-3 Long Leads package, it operates across a temperature range of -55°C to 175°C (TJ). Power dissipation is 3.8 W (Ta) and 170 W (Tc). This MOSFET is suitable for applications in power supply, industrial, and automotive sectors.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 170W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 86 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1960 pF @ 25 V |
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