IRFSL23N15D
MOSFET N-CH 150V 23A TO262Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFSL23N15D is an N-Channel power MOSFET designed for high-efficiency switching applications. This component features a 150V drain-source breakdown voltage (Vdss) and a continuous drain current capability of 23A at 25°C (Tc). With a maximum on-resistance (Rds On) of 90mOhm at 14A and 10V (Vgs), it offers low conduction losses. The device boasts a gate charge (Qg) of 56nC at 10V and an input capacitance (Ciss) of 1200pF at 25V. It is packaged in a TO-262-3 Long Leads, I2PAK, TO-262AA (TO-262-3 Long Leads) through-hole configuration. Power dissipation is rated at 3.8W (Ta) and 136W (Tc). Operating temperature range is from -55°C to 175°C (TJ). This device is commonly utilized in power supply units, motor control, and industrial automation systems.
Additional Information
Series: HEXFET®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 23A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 14A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 136W (Tc) |
| Vgs(th) (Max) @ Id | 5.5V @ 250µA |
| Supplier Device Package | TO-262 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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