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IRFS7787TRLPBF

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IRFS7787TRLPBF

MOSFET N-CH 75V 76A D2PAK

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies' IRFS7787TRLPBF is a N-Channel HEXFET®, StrongIRFET™ Power MOSFET. This component features a 75 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 76 A at 25°C. The device offers a low on-resistance (Rds On) of 8.4 mOhm at 46 A and 10 V gate-source voltage. Designed for surface mounting in a TO-263-3, D2PAK package, it supports a maximum power dissipation of 125 W. Key parameters include a gate charge (Qg) of 109 nC at 10 V and input capacitance (Ciss) of 4020 pF at 25 V. The operating temperature range is -55°C to 175°C. This MOSFET is suitable for applications in automotive and industrial sectors requiring high current handling and efficient switching.

Additional Information

Series: HEXFET®, StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C76A (Tc)
Rds On (Max) @ Id, Vgs8.4mOhm @ 46A, 10V
FET Feature-
Power Dissipation (Max)125W (Tc)
Vgs(th) (Max) @ Id3.7V @ 100µA
Supplier Device PackagePG-TO263-3
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)75 V
Gate Charge (Qg) (Max) @ Vgs109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4020 pF @ 25 V

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