IRFS7762TRLPBF
MOSFET N-CH 75V 85A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' StrongIRFET™ series MOSFET, IRFS7762TRLPBF, is an N-Channel device featuring a 75V drain-source voltage and a continuous drain current rating of 85A at 25°C (Tc). This surface mount component, packaged in a TO-263-3 (D2PAK) configuration, offers a low on-resistance of 6.7mOhm maximum at 51A and 10V Vgs. The device supports gate drive voltages from 6V to 10V and has a maximum gate charge of 130 nC at 10V. With a maximum power dissipation of 140W (Tc) and an operating temperature range of -55°C to 175°C, the IRFS7762TRLPBF is suitable for demanding applications in industries such as electric vehicle powertrains, industrial motor control, and power supplies. The input capacitance (Ciss) is 4440 pF maximum at 25V.
Additional Information
Series: HEXFET®, StrongIRFET™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 85A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.7mOhm @ 51A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 3.7V @ 100µA |
| Supplier Device Package | PG-TO263-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4440 pF @ 25 V |
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