IRFS7762PBF
MOSFET N-CH 75V 85A D2PAKManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies HEXFET® IRFS7762PBF is an N-Channel power MOSFET with a Drain-to-Source Voltage (Vdss) of 75V and a continuous drain current (Id) of 85A at 25°C. This device features a low Rds(on) of 6.7mOhm maximum at 51A and 10V Vgs. The gate charge (Qg) is 130 nC maximum at 10V Vgs, and input capacitance (Ciss) is 4440 pF maximum at 25V Vds. With a maximum power dissipation of 140W, it is designed for efficient operation. The IRFS7762PBF is housed in a TO-263AB (D2PAK) surface mount package, making it suitable for applications in automotive, industrial power control, and high-current switching systems. It operates within a temperature range of -55°C to 175°C (TJ) and has a maximum gate-source voltage (Vgs) of ±20V.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 85A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.7mOhm @ 51A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Vgs(th) (Max) @ Id | 3.7V @ 100µA |
| Supplier Device Package | TO-263AB (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4440 pF @ 25 V |
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